HTRB High temperature reverse bias test system feature
1,Database loading and import, automatically completing the experimental process, convenient for operation and use;
2,The aging power supply of the DUT of the tested device adopts a zoning unified supply and programmable control method;
3,Real time monitoring of the leakage current IR of each device, capable of outputting test reports and depicting complete change curves;
4,The module supports simultaneous power on and monitoring of the upper and lower bridges;
5,For SiC products, the minimum HTGB collection can reach 0.1nA
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High temperature reverse bias test system |
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Product model |
GK-HTXB-C16 |
GK-HTXB-C16FS |
GK-HTXB-H8P |
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Scope of application |
The system can meet the HTRB testing of various packaging forms of Si/SiC/GaN materials such as IGBT/DIODE/MOSFET/HEMT/BJT/SCR devices |
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Maximum test temperature |
175℃/200℃/300℃ |
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Test capacity |
16(channel)*80(station)=1280 |
16(channel)*40(station)=640 |
8(channel)*10(station)=80 |
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Basic function |
1,Setting of upper limit of leakage current, upper limit of test voltage, and upper limit of temperature; Setting of aging time; 2,Real time monitoring and display of burn-in time, burn-in progress, number of failed stations, etc. for each channel; 3,Real time display and record of burn-in parameters (IR, VR, Temperature per station); 4,Real time judgment of whether the limit is exceeded, alarm for exceeding the limit, and record the exceeding station and time; 5,Real time display of the maximum IR value for each station, and display the time when the maximum IR value was generated; 6,The burn-in parameters are easy to call, can generate test reports, and can draw leakage current change curves. |
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Expand functionality |
①Quick cut-off function for each station (after exceeding the limit, cut off the voltage at that station for 200ms) ②NTC monitor |
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External dimensions |
W1360mmхH1820mmхD1320mm |
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Weight |
about 500kg |
about 500kg |
about 500kg |
